The overheating effects in germanium quantum well with two subbands occupied

Автор(и)

  • I.B. Berkutov B. Verkin Institute for Low Temperature Physics and Engineering of the National Academy of Sciences of Ukraine 47 Nauky Ave., Kharkiv 61103, Ukraine
  • V.V. Andrievskii B. Verkin Institute for Low Temperature Physics and Engineering of the National Academy of Sciences of Ukraine 47 Nauky Ave., Kharkiv 61103, Ukraine
  • Yu.A. Kolesnichenko B. Verkin Institute for Low Temperature Physics and Engineering of the National Academy of Sciences of Ukraine 47 Nauky Ave., Kharkiv 61103, Ukraine
  • Yu.F. Komnik B. Verkin Institute for Low Temperature Physics and Engineering of the National Academy of Sciences of Ukraine 47 Nauky Ave., Kharkiv 61103, Ukraine
  • O.A. Mironov Institute of Low Temperature and Structure Research, Polish Academy of Sciences ul. Okólna 2, 50-422, Wrocław, Poland

DOI:

https://doi.org/10.1063/1.5049161

Ключові слова:

quantum well, overheating effects, acoustical coupling, the heat balance equation.

Анотація

The charge carrier overheating effect was studied in the p-type Si0.4Ge0.6/Ge/Si0.4Ge0.6 heterostructure with two subband occupy. The temperature dependences of hole-phonon relaxation time τh-ph at weak magnetic fields demonstrated transition of the 2D system from regime of “partial inelasticity” characterized by dependence τ-1h-ph ∝ T 2 to regime of small-angle scattering, described by dependence τ-1h-ph ∝ T 5 with temperature increase. But in higher magnetic fields the dependence τ-1h-ph ∝ T 3 manifests itself on dependences τh-ph(Th-ph). The possible explanations of such dependences are discussed.

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Опубліковано

2018-06-19

Як цитувати

(1)
Berkutov, I.; Andrievskii, V.; Kolesnichenko, Y.; Komnik, Y.; Mironov, O. The Overheating Effects in Germanium Quantum Well With Two Subbands Occupied. Fiz. Nizk. Temp. 2018, 44, 1018-1024.

Номер

Том 44 № 8 (2018)

Розділ

Електронні властивості провідних систем

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