Conductance of a STM contact on the surface of a thin film
DOI (Low Temperature Physics):
https://doi.org/10.1063/1.4723673Ключові слова:
STM, surface barrier, thin film, conductance.Анотація
The conductance of a contact, having a radius smaller than the Fermi wave length, on the surface of a thin metal film is investigated theoretically. It is shown that quantization of the electron energy spectrum in the film leads to a step-like dependence of differential conductance G(V) as a function of applied bias eV. The distance between neighboring steps in eV equals the energy level spacing due to size quantization. We demonstrate that a study of G(V) for both signs of the voltage maps the spectrum of energy levels above and below Fermi surface in scanning tunneling experiments.
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Опубліковано
2012-04-06
Як цитувати
(1)
N.V. Khotkevych, Yu.A. Kolesnichenko, and J.M. van Ruitenbeek, Conductance of a STM contact on the surface of a thin film, Low Temp. Phys. 38, (2012) [Fiz. Nizk. Temp. 38, 644-652, (2012)] DOI: https://doi.org/10.1063/1.4723673.
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Електронні властивості провідних систем
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