Activation transport under quantum Hall regime in HgTe-based heterostructure
DOI (Low Temperature Physics):
https://doi.org/10.1063/1.4983183Ключові слова:
quantum well, activation magnetotransport, effective mass, g factor.Анотація
We have measured the temperature (2.9 K < T < 50 K) and magnetic field (0 T < B < 9 T) dependences of longitudinal and Hall resistivities for HgCdTe/HgTe/HgCdTe system with HgTe quantum well width of 20.3 nm. The activation analysis of the experimental magnetoresistivity traces has been used as a quantitative tool to probe inter-Landau level distances. The activation energies were determined from the temperature dependence of the longitudinal resistivity in the regions of quantized Hall plateaus (for the filling factors ν of 1, 2 and 3) and the indications of the large values of the g factor ≅ 30–75 were found.
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2017-02-20
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S.V. Gudina, N.N. Mikhailov, M.V. Yakunin, S.M. Podgornykh, N.G. Shelushinina, G.I. Harus, E.V. Ilchenko, E.G. Novik, V.N. Neverov, and S.A. Dvoretsky, Activation transport under quantum Hall regime in HgTe-based heterostructure, Low Temp. Phys. 43, (2017) [Fiz. Nizk. Temp. 43, 605-611, (2017)] DOI: https://doi.org/10.1063/1.4983183.
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