Conductance of a STM contact on the surface of a thin film

Автор(и)

  • N.V. Khotkevych B. Verkin Institute for Low Temperature Physics and Engineering of the National Academy of Sciences of Ukraine, 47 Lenin Ave., Kharkov 61103, Ukraine
  • Yu.A. Kolesnichenko B. Verkin Institute for Low Temperature Physics and Engineering of the National Academy of Sciences of Ukraine, 47 Lenin Ave., Kharkov 61103, Ukraine
  • J.M. van Ruitenbeek Kamerlingh Onnes Laboratorium, Universiteit Leiden, Postbus 9504, 2300 Leiden, The Netherlands

DOI:

https://doi.org/10.1063/1.4723673

Ключові слова:

STM, surface barrier, thin film, conductance.

Анотація

The conductance of a contact, having a radius smaller than the Fermi wave length, on the surface of a thin metal film is investigated theoretically. It is shown that quantization of the electron energy spectrum in the film leads to a step-like dependence of differential conductance G(V) as a function of applied bias eV. The distance between neighboring steps in eV equals the energy level spacing due to size quantization. We demonstrate that a study of G(V) for both signs of the voltage maps the spectrum of energy levels above and below Fermi surface in scanning tunneling experiments.

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Опубліковано

2012-04-06

Як цитувати

(1)
Khotkevych, N.; Kolesnichenko, Y.; Ruitenbeek, J. van. Conductance of a STM Contact on the Surface of a Thin Film. Fiz. Nizk. Temp. 2012, 38, 644-652.

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Електронні властивості провідних систем

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