Zinc oxide for electronic, photovoltaic and optoelectronic applications

Автор(и)

  • M. Godlewski Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, Warsaw, Poland
  • E. Guziewicz Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, Warsaw, Poland
  • K. Kopalko Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, Warsaw, Poland
  • G. Łuka Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, Warsaw, Poland
  • M.I. Łukasiewicz Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, Warsaw, Poland
  • T. Krajewski Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, Warsaw, Poland
  • B.S. Witkowski Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, Warsaw, Poland
  • S. Giera╕towska Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, Warsaw, Poland

DOI:

https://doi.org/10.1063/1.3570930

Ключові слова:

ZnO films, semiconductor/organic material hybrid structures, applications of ZnO.

Анотація

We demonstrate that the atomic layer deposition (ALD) technique has large potential to be widely used in a production of ZnO films for applications in electronic, photovoltaic (PV) and optoelectronic devices. Low growth temperature makes the ALD-grown ZnO films suitable for construction of various semiconductor/organic material hybrid structures. This opens possibilities of construction of novel devices based on very cheap organic materials. This includes organic light emitting diodes and PV cells of the third generation, as discussed in the present work.

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Опубліковано

2011-01-28

Як цитувати

(1)
Godlewski, M.; Guziewicz, E.; Kopalko, K.; Łuka, G.; Łukasiewicz, M.; Krajewski, T.; Witkowski, B.; Giera╕towska, S. Zinc Oxide for Electronic, Photovoltaic and Optoelectronic Applications. Fiz. Nizk. Temp. 2011, 37, 301-307.

Номер

Том 37 № 3 (2011)

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