Doped nanoparticles for optoelectronics applications

Автор(и)

  • M. Godlewski Institute of Physics Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw, Poland
  • E. Wolska Department of Mathematics and Natural Sciences, College of Sciences, Cardinal S. Wyszyński University, Warsaw, Poland
  • S. Yatsunenko Institute of Physics Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw, Poland
  • A. Opalińska Department of Mathematics and Natural Sciences, College of Sciences, Cardinal S. Wyszyński University, Warsaw, Poland
  • J. Fidelus Department of Mathematics and Natural Sciences, College of Sciences, Cardinal S. Wyszyński University, Warsaw, Poland
  • W. Łojkowski Department of Mathematics and Natural Sciences, College of Sciences, Cardinal S. Wyszyński University, Warsaw, Poland
  • M. Zalewska Institute of High Pressure PAN «Unipress», Sokolowska 29/37, Warsaw, Poland
  • A. Kłonkowski Institute of High Pressure PAN «Unipress», Sokolowska 29/37, Warsaw, Poland
  • D. Kuritsyn Faculty of Chemistry, University of Gdańsk, Sobieskiego 18, 80-952 Gdańsk, Poland

DOI:

https://doi.org/10.1063/1.3064908

Ключові слова:

excitation processes in nanoparticles, photon cascade processes.

Анотація

Nanoparticles of wide band gap materials doped with transition metal ions or rare earth ions are intensively studied for their possible applications in a new generation of light sources for an overhead illumination. In this work we discuss mechanisms of emission enhancement in nanoparticles doped with rare earth or/and transition metal ions. Arguments are presented that phosphors of nanosize may emit light more efficiently and thus be applied in practical optoelectronic devices.

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Опубліковано

2008-12-05

Як цитувати

(1)
Godlewski, M.; Wolska, E.; Yatsunenko, S.; Opalińska, A.; Fidelus, J.; Łojkowski, W.; Zalewska, M.; Kłonkowski, A.; Kuritsyn, D. Doped Nanoparticles for Optoelectronics Applications. Fiz. Nizk. Temp. 2008, 35, 64-69.

Номер

Том 35 № 1 (2009)

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