Proximity phenomena in double-barrier structure NbZr/NbOx/Al/AlOy/NbZr

Автор(и)

  • A. Plecenik Institute of Electrical Engineering, Slovak Academy of Sciences,Dubravska cesta 9, 84239 Bratislava, Slovak Republic
  • S. Gazi Institute of Electrical Engineering, Slovak Academy of Sciences,Dubravska cesta 9, 84239 Bratislava, Slovak Republic
  • M. Zuzcak Institute of Electrical Engineering, Slovak Academy of Sciences,Dubravska cesta 9, 84239 Bratislava, Slovak Republic
  • S. Benacka Institute of Electrical Engineering, Slovak Academy of Sciences,Dubravska cesta 9, 84239 Bratislava, Slovak Republic
  • V. Shaternik Institute for Metal Physics, National Academy of Sciences of Ukraine, 36 Vernadsky Str., 252142 Kiev, Ukraine
  • E. Rudenko Institute for Metal Physics, National Academy of Sciences of Ukraine, 36 Vernadsky Str., 252142 Kiev, Ukraine

DOI (Low Temperature Physics):


https://doi.org/10.1063/1.593822

Ключові слова:

PACS: 74.80.Fp

Анотація

A tunneling structures NbZr/NbOx/Al/AlOy/NbZr with a thin barrier in the NbZr/NbOx/Al junction and 4 to 6-nm-thick Al interlayer were prepared and studied experimentally. A proximity effect between NbZr and Al through NbOx barrier has been observed. An electrical voltage was generated in the NbOx barrier and a coexistence of the proximity effect and applied voltage in the junction NbZr/NbOx/Al has been observed. This experiment could be described on the basis of a model for coherent charge transport in superconducting/normal proximity structures.

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Опубліковано

1999-10-10

Як цитувати

(1)
A. Plecenik, S. Gazi, M. Zuzcak, S. Benacka, V. Shaternik, and E. Rudenko, Proximity phenomena in double-barrier structure NbZr/NbOx/Al/AlOy/NbZr, Low Temp. Phys. 25, (1999) [Fiz. Nizk. Temp. 25, 1082-1086, (1999)] DOI: https://doi.org/10.1063/1.593822.

Номер

Том 25 № 10 (1999)

Розділ

Низькоpозмірні та невпорядковані системи

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