The annealing influence onto the electrical and magnetic behavior of magnetoresistive/insulator system

Автор(и)

  • A.M. Ahmed Physics department, Faculty of Science, Sohag University 82524, Sohag, Egypt
  • Abd El-Mo’ez A. Mohamed Physics department, Faculty of Science, Sohag University 82524, Sohag, Egypt
  • H.F. Mohamed Physics department, Faculty of Science, Sohag University 82524, Sohag, Egypt
  • A.K. Diab Physics department, Faculty of Science, Sohag University 82524, Sohag, Egypt
  • Aml M. Mohamed Physics department, Faculty of Science, Sohag University 82524, Sohag, Egypt
  • A.E.A. Mazen Physics department, Faculty of Science, Sohag University 82524, Sohag, Egypt

DOI (Low Temperature Physics):


https://doi.org/10.1063/1.4962749%20

Ключові слова:

colossal magnetoresistance; electrical resistivity; magnetization

Анотація

This investigation is mainly concerned with the effect of annealing temperature (600, 700, 800 and 900 °C) in air for (La0.7Ba0.3MnO3)1–x/(NiO)x with x = 0 and x = 0.10 samples. It was shown that the annealing temperature does not affect the structure and parameters of rhombohedral lattice of the samples. However, it is observed that the annealing treatment has a notable effect on the electrical resistivity and the metal-semiconductor transition temperature Tms. Temperature dependent magnetization measurements showed a decrease in Curie temperature TC with annealing temperature. In the same time, annealing process decreases the magnetoresistance of La0.7Ba0.3MnO3, in contrast to (La0.7Ba0.3MnO3)0.9/(NiO)0.1 composite.

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Опубліковано

2016-07-18

Як цитувати

(1)
A.M. Ahmed, Abd El-Mo’ez A. Mohamed, H.F. Mohamed, A.K. Diab, Aml M. Mohamed, and A.E.A. Mazen, The annealing influence onto the electrical and magnetic behavior of magnetoresistive/insulator system, Low Temp. Phys. 42, (2016) [Fiz. Nizk. Temp. 42, 951-958, (2016)] DOI: https://doi.org/10.1063/1.4962749 .

Номер

Том 42 № 9 (2016)

Розділ

Низькотемпературний магнетизм

Завантаження

Дані завантаження ще не доступні.

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