Electron tunneling into surface states through an inhomogeneous barrier: asymptotically exact solution of the problem and STM theory

Автор(и)

  • N.V. Khotkevych B. Verkin Institute for Low Temperature Physics and Engineering of the National Academy of Sciences of Ukraine 47 Lenin Ave., Kharkov 61103, Ukraine
  • Yu.A. Kolesnichenko B. Verkin Institute for Low Temperature Physics and Engineering of the National Academy of Sciences of Ukraine 47 Lenin Ave., Kharkov 61103, Ukraine
  • J.M. van Ruitenbeek Kamerlingh Onnes Laboratorium, Universiteit Leiden, Postbus 9504, 2300 Leiden, The Netherlands

DOI:

https://doi.org/10.1063/1.4795003

Ключові слова:

STM, electron tunneling, surface states, single defect, electron scattering.

Анотація

We have found an asymptotically exact solution of the Schrödinger equation for electrons tunneling into surface states through an inhomogeneous barrier of large amplitude. Assuming an elliptic dispersion law for the charge carriers the “standing wave” pattern in the conductance of the system resulting from the electron scattering by a single defect in the vicinity of the surface is analyzed.

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Опубліковано

2013-01-15

Як цитувати

(1)
Khotkevych, N.; Kolesnichenko, Y.; Ruitenbeek, J. van. Electron Tunneling into Surface States through an Inhomogeneous Barrier: Asymptotically Exact Solution of the Problem and STM Theory. Fiz. Nizk. Temp. 2013, 39, 384-389.

Номер

Том 39 № 3 (2013)

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