Origin of an enhanced colossal magnetoresistance effect in epitaxial Nd0.52Sr0.48MnO3 thin films
DOI (Low Temperature Physics):
https://doi.org/10.1063/1.3592229Ключові слова:
colossal magnetoresistance, charge ordering, percolation, magnetic films.Анотація
Nd0.52Sr0.48MnO3 films with the different thickness have been prepared by dc magnetron sputtering on LaAlO3 (001) single-crystalline substrates. A decrease of the film thickness leads to a significant suppression of the ferromagnetic (FM) ordering and the Curie point becomes below the antiferromagnetic (AFM) transition temperature. As this take place, a huge rise of the magnetoresistance ratio from 400 to 60 000% at an applied magnetic field of 5 T is observed. We consider that this new kind of the enhanced colossal magnetoresistance effect is originated from the FM/AFM competition and the collapse of the charge-ordered state at high magnetic field rather than through the regular double-exchange mechanism.
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Опубліковано
2011-02-28
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V.G. Prokhorov, Yu.M. Nikolaenko, G.G. Levtchenko, V.L. Svetchnikov, Y.P. Lee, J.S. Park, T.W. Eom, J.M. Kim, G.G. Kaminsky, and V.A. Khokhlov, Origin of an enhanced colossal magnetoresistance effect in epitaxial Nd0.52Sr0.48MnO3 thin films, Low Temp. Phys. 37, (2011) [Fiz. Nizk. Temp. 37, 392-396, (2011)] DOI: https://doi.org/10.1063/1.3592229.
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Низькотемпературний магнетизм
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