Resonant tunneling of electrons in quantum wires (Review Article)

Квантовые жидкости и квантовые кpисталлы

Автор(и)

  • I.V. Krive Department of Physics, University of Gothenburg, SE-412 96 Göteborg, Sweden
  • A. Palevski Tel Aviv University, School of Physics and Astronomy, IL-69978 Tel Aviv, Israel
  • R.I. Shekhter Department of Physics, University of Gothenburg, SE-412 96 Göteborg, Sweden
  • M. Jonson Department of Physics, University of Gothenburg, SE-412 96 Göteborg, Sweden

DOI:

https://doi.org/10.1063/1.3319350

Ключові слова:

nanostructures, two-dimensional electron gas, quantum tunneling, fabrication of quantum wires.

Анотація

We considered resonant electron tunneling in various nanostructures including single wall carbon nanotubes, molecular transistors and quantum wires formed in two-dimensional electron gas. The review starts with a textbook description of resonant tunneling of noninteracting electrons through a double-barrier structure. The effects of electron–electron interaction in sequential and resonant electron tunneling are studied by using Luttinger liquid model of electron transport in quantum wires. The experimental aspects of the problem (fabrication of quantum wires and transport measurements) are also considered. The influence of vibrational and electromechanical effects on resonant electron tunneling in molecular transistors is discussed.

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Опубліковано

2009-12-25

Як цитувати

(1)
Krive, I.; Palevski, A.; Shekhter, R.; Jonson, M. Resonant Tunneling of Electrons in Quantum Wires (Review Article): Квантовые жидкости и квантовые кpисталлы. Fiz. Nizk. Temp. 2009, 36, 155-180.

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