Overheating effect and hole-phonon interaction in SiGe heterostructures

Автор(и)

  • I.B. Berkutov B. Verkin Institute for Low Temperature Physics and Engineering of the National Academy of Sciences of Ukraine 47 Lenin Ave., Kharkov 61103, Ukraine
  • V.V. Andrievskii B. Verkin Institute for Low Temperature Physics and Engineering of the National Academy of Sciences of Ukraine 47 Lenin Ave., Kharkov 61103, Ukraine
  • Yu.F. Komnik B. Verkin Institute for Low Temperature Physics and Engineering of the National Academy of Sciences of Ukraine 47 Lenin Ave., Kharkov 61103, Ukraine
  • M. Myronov Musashi Institute of Technology, 8-15-1 Todoroki, Setagaya-ku, Tokyo, Japan
  • O.A. Mironov Warwick SEMINANO R&D Centre,University of Warwick Science Park, Coventry CV4 7EZ, UK

DOI:

https://doi.org/10.1063/1.3009592

Ключові слова:

quantum well, 2D hole gas, Shubnikov–de Haas oscillation, hole–phonon relaxation time.

Анотація

The effect of the charge carriers overheating in a two-dimensional (2D) hole gas in a Si1-xGex quantum well, where x = 0.13; 0.36; 0.8, 0.95, has been realized. The Shubnikov-de Haas (SdH) oscillation amplitude was used as a "thermometer" to measure the temperature of overheated holes. The temperature dependence of the hole-phonon relaxation time was found using analysis of dependence of amplitude of SdH oscillations change on temperature and applied electrical field. Analysis of the temperature dependence of the hole-phonon relaxation time exhibits transition of 2D system from regime of "partial inelasticity" to conditions of small angle scattering.

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Опубліковано

2008-10-02

Як цитувати

(1)
Berkutov, I.; Andrievskii, V.; Komnik, Y.; Myronov, M.; Mironov, O. Overheating Effect and Hole-Phonon Interaction in SiGe Heterostructures. Fiz. Nizk. Temp. 2008, 34, 1192-1196.

Номер

Том 34 № 11 (2008)

Розділ

Низькоpозмірні та невпорядковані системи

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