Confinement effects on decay rate of surface electron states over liquid helium

Электроны над жидким гелием

Автор(и)

  • S.S. Sokolov B. Verkin Institute for Low Temperature Physics and Engineering of the National Academy of Sciences of Ukraine 47 Lenin Ave., Kharkov 61103, Ukraine
  • J.M. Villas-Bôoas Walter Schottky Institut, Technische Universität München, Am Coulombwall, D-85748 Garching, Germany
  • Yu.P. Monarkha B. Verkin Institute for Low Temperature Physics and Engineering of the National Academy of Sciences of Ukraine 47 Lenin Ave., Kharkov 61103, Ukraine
  • Nelson Studart Departamento de Física, Universidade Federal de São Carlos, 13565-905, São Carlos, São Paulo, Brazil

DOI:

https://doi.org/10.1063/1.2913001

Ключові слова:

quantum dot, two-ripplon process, lifetime of excited states.

Анотація

The decay rate of excited states of surface electrons in liquid helium, trapped in a quantum dot system, is evaluated, taking into account the process of spontaneous radiation of two-ripplons with short wavelength. We find that the values of the decay rate in later process are rather higher than those for the one-ripplon process previously calculated. The upper-bound limit lifetime of excited states of surface electrons in a quantum dot is found to be t < 10-6–10-7 s.

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Опубліковано

2008-03-17

Як цитувати

(1)
Sokolov, S.; Villas-B&ocirc;oas, J.; Monarkha, Y.; Studart, N. Confinement Effects on Decay Rate of Surface Electron States over Liquid Helium: Электроны над жидким гелием. Fiz. Nizk. Temp. 2008, 34, 480-483.

Номер

Том 34 № 4-5 (2008)

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