Kinetic study of inelastic radiation-induced processes in rare-gas cryocrystals

Electronic Processes in Cryocrystals

Автор(и)

  • A.N. Ogurtsov National Technical University «KhPI», 21 Frunse Str., Kharkov 61002, Ukraine
  • N.Yu. Masalitina National Technical University «KhPI», 21 Frunse Str., Kharkov 61002, Ukraine
  • O.N. Bliznjuk National Technical University «KhPI», 21 Frunse Str., Kharkov 61002, Ukraine

DOI (Low Temperature Physics):


https://doi.org/10.1063/1.2746242

Ключові слова:

rare-gas crystals, self-trapping, Frenkel pairs, defect accumulation.

Анотація

The processes of large-scale atomic displacements induced by exciton self-trapping were studied using the selective vacuum ultraviolet luminescence method. Models of Frenkel pairs creation in rare-gas crystals are discussed with a focus on excited-state mechanisms of defect formation. A simple kinetic model of defect accumulation in rare-gas samples is proposed.

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Опубліковано

2007-05-30

Як цитувати

(1)
A.N. Ogurtsov, N.Yu. Masalitina, and O.N. Bliznjuk, Kinetic study of inelastic radiation-induced processes in rare-gas cryocrystals: Electronic Processes in Cryocrystals, Low Temp. Phys. 33, (2007) [Fiz. Nizk. Temp. 33, 689-693, (2007)] DOI: https://doi.org/10.1063/1.2746242.

Номер

Том 33 № 6-7 (2007)

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