Photon-stimulated recombination of self-trapped holes with electrons in pre-irradiated solid Ar

Автор(и)

  • G.B. Gumenchuk B. Verkin Institute for Low Temperature Physics and Engineering of the National Academy of Sciences of Ukraine, 47 Lenin Ave., Kharkov 61103, Ukraine
  • M.A. Bludov B. Verkin Institute for Low Temperature Physics and Engineering of the National Academy of Sciences of Ukraine, 47 Lenin Ave., Kharkov 61103, Ukraine
  • A.G. Belov B. Verkin Institute for Low Temperature Physics and Engineering of the National Academy of Sciences of Ukraine, 47 Lenin Ave., Kharkov 61103, Ukraine

DOI:

https://doi.org/10.1063/1.1867313

Ключові слова:

PACS: 72.20.Jv, 78.60.Hk

Анотація

Spatially separated stable charge centers – trapped electrons and self-trapped holes – are generated in Ar cryocrystals by a low-energy electron beam. A combination of the cathodoluminescence and photon-stimulated luminescence methods has been used to probe recombination reactions. Photon-stimulated vacuum ultraviolet intrinsic recombination luminescence from pre-irradiated solid Ar was detected for the first time. The 1.96 eV laser light has been demonstrated to release electrons from their traps that gives rise to the well-known M-band at 9.8 eV. Additional information on the photostability of charge centers at low temperatures has been obtained.

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Опубліковано

2004-12-29

Як цитувати

(1)
Gumenchuk, G.; Bludov, M.; Belov, A. Photon-Stimulated Recombination of Self-Trapped Holes With Electrons in Pre-Irradiated Solid Ar. Fiz. Nizk. Temp. 2004, 31, 237-240.

Номер

Том 31 № 2 (2005)

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