Effects of electron irradiation on structure and bonding of SF6 on Ru(0001)
DOI (Low Temperature Physics):
https://doi.org/10.1063/1.1542442Ключові слова:
PACS: 79.20.LaАнотація
Electron stimulated desorption ion angular distribution (ESDIAD) and temperature programmed desorption (TPD) techniques have been employed to study radiation-induced decomposition of fractional monolayer SF6 films physisorbed on Ru(0001) at 25 K. Our focus is on the origin of F+ and F- ions, which dominate ESD from fractional monolayers. F- ions escape only in off-normal directions and originate from undissociated molecules. The origins of F+ ions are more complicated. The F+ ions from electron stimulated desorption of molecularly adsorbed SF6 desorb in off-normal directions, in symmetric ESDIAD patterns. Electron beam exposure leads to formation of SFx (x = 0 - 5) fragments, which become the source of positive ions in normal and off-normal directions. Electron exposure > 1016 cm- 2 results in decomposition of the entire adsorbed SF6 layer.
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2003-02-02
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N.S. Faradzhev, D.O. Kusmierek, B.V. Yakshinskiy, and T.E. Madey, Effects of electron irradiation on structure and bonding of SF6 on Ru(0001), Low Temp. Phys. 29, (2003) [Fiz. Nizk. Temp. 29, 286-295, (2003)] DOI: https://doi.org/10.1063/1.1542442.
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