Classical mesoscopic effect in the resistance of point contacts
DOI (Low Temperature Physics):
https://doi.org/10.1063/1.593509Ключові слова:
PACS: 72.15.Qm, 72.10.Fk, 73.40.JnАнотація
The mesoscopic effect of the dependence of the point-contact conductance on the spatial distribution of the impurities is theoretically studied. It is shown that the resistance dependence on the diameter d is not only determined by the electron mean free path li , but also by the average distance between the impurities. In the case of two types of impurities with different concentrations the mesoscopic effect is predicted for a dirty point contact (d >> li) due to the scattering at specific (e.g., magnetic) impurities with a low concentration. Such contacts were numerically modeled for random distributions of the two types of impurities.
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Опубліковано
1997-12-10
Як цитувати
(1)
Yu. A. Kolesnichenko, A. N. Omelyanchouk, A. I. Yanson, and N. van der Post, Classical mesoscopic effect in the resistance of point contacts, Low Temp. Phys. 23, (1997) [Fiz. Nizk. Temp. 23, 1309-1314, (1997)] DOI: https://doi.org/10.1063/1.593509.
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Низькоpозмірні та невпорядковані системи
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