Origin of an enhanced colossal magnetoresistance effect in epitaxial Nd0.52Sr0.48MnO3 thin films

Автор(и)

  • V.G. Prokhorov Institute of Metal Physics, NASU, Kiev 03142, Ukraine
  • Yu.M. Nikolaenko Donetsk Institute for Physics and Technology, NASU, Donetsk 83114, Ukraine
  • G.G. Levtchenko Donetsk Institute for Physics and Technology, NASU, Donetsk 83114, Ukraine
  • V.L. Svetchnikov National Center for HREM, TU Delft 2628AL, The Netherlands
  • Y.P. Lee q-Psi and Department of Physics, Hanyang University, Seoul 133-791, Korea
  • J.S. Park q-Psi and Department of Physics, Hanyang University, Seoul 133-791, Korea
  • T.W. Eom q-Psi and Department of Physics, Hanyang University, Seoul 133-791, Korea
  • J.M. Kim q-Psi and Department of Physics, Hanyang University, Seoul 133-791, Korea
  • G.G. Kaminsky Institute of Metal Physics, NASU, Kiev 03142, Ukraine
  • V.A. Khokhlov Donetsk Institute for Physics and Technology, NASU, Donetsk 83114, Ukraine

DOI:

https://doi.org/10.1063/1.3592229

Ключові слова:

colossal magnetoresistance, charge ordering, percolation, magnetic films.

Анотація

Nd0.52Sr0.48MnO3 films with the different thickness have been prepared by dc magnetron sputtering on LaAlO3 (001) single-crystalline substrates. A decrease of the film thickness leads to a significant suppression of the ferromagnetic (FM) ordering and the Curie point becomes below the antiferromagnetic (AFM) transition temperature. As this take place, a huge rise of the magnetoresistance ratio from 400 to 60 000% at an applied magnetic field of 5 T is observed. We consider that this new kind of the enhanced colossal magnetoresistance effect is originated from the FM/AFM competition and the collapse of the charge-ordered state at high magnetic field rather than through the regular double-exchange mechanism.

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Опубліковано

2011-02-28

Як цитувати

(1)
Prokhorov, V.; Nikolaenko, Y.; Levtchenko, G.; Svetchnikov, V.; Lee, Y.; Park, J.; Eom, T.; Kim, J.; Kaminsky, G.; Khokhlov, V. Origin of an Enhanced Colossal Magnetoresistance Effect in Epitaxial Nd0.52Sr0.48MnO3 Thin Films. Fiz. Nizk. Temp. 2011, 37, 392-396.

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Низькотемпературний магнетизм

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