BELEVSKII, P. A.; VINOSLAVSKII, M. N.; VAINBERG, V. V.; PYLYPCHUK, O. S.; POROSHIN, V. N. Resistive switching effect in the n-InGaAs/GaAs heterostructures with double tunnel-coupled quantum wells. ФІЗИКА НИЗЬКИХ ТЕМПЕРАТУР, Харків, Україна, v. 48, n. 2, p. 176–180, 2021. DOI: 10.1063/10.0009296. Disponível em: https://fnt.ilt.kharkov.ua/index.php/fnt/article/view/f48-0176e. Acesso em: 18 груд. 2024.