Magneto-transport properties of Si1–xGex whiskers
Anatoly Druzhinin, Igor Ostrovskii, Yuriy Khoverko, and Natalia Liakh-Kaguy
Department of semiconductor electronics Lviv Polytechnic National University, Lviv 79013, Ukraine
Received December 21, 2021, published online May 20, 2022
The field and temperature magnetoresistance dependences of the Si1–xGex (x = 0.05) whiskers at low temperatures were studied in the magnetic field range of 0–14 T with using of the Bitter magnet. The investigated whiskers with diameters 5–15 μm were grown by chemical vapour deposition with a doping concentration in the vicinity to the metal–insulator transition (Nc ≈ 7.8∙1018 cm–3). The linear magnetoresistance effect of the solid solution Si1–xGex whiskers was found in all range of the magnetic fields due to the surface coherence scattering of charge carriers as a result of conduction in the whisker core-shell structure.
Key words:  Si1–xGex whiskers, linear magnetoresistance, doping concentration, surface coherence scattering, core-shell structure.