Large area CdxHg1–xTe photodiode with picosecond response time τRC
N. J. Ismayilov and A. A. Rajabli
The Institute of Physics of the National Academy of Sciences of Azerbaijan, Baku Az-1143, Azerbaijan
Received July 16, 2021, revised August 27, 2021, published online December 24, 2021
The design and manufacturing technology of high -quality CdxHg1–xTe n+–n–p–p+-type mesaphotodiodes
∅ 300 μm for the spectral range of 3–5 μm are presented. The features of the design and technology, as well as
the main characteristics of the manufactured photodiodes are presented. It is shown that the use of a semitransparent nickel layer 5 nm thick deposited on the surface of the n+ layer makes it possible to reduce the series resistance Rser to 1–2 Ohm, and the response time to 10–11 s.