Физика Низких Температур: Том 48, Выпуск 2 (Февраль 2022), c. 176-180 ( к оглавлению , назад )
Resistive switching effect in the n-InGaAs/GaAs heterostructures with double tunnel-coupled quantum wells
P. A. Belevskii, M. N. Vinoslavskii, V. V. Vainberg, O. S. Pylypchuk, and V. N. Poroshin
Institute of Physics, National Academy of Sciences of Ukraine, Kyiv 03028, Ukraine
Received August 30, 2021, published online December 24, 2021
The electric conductivity behavior in the single and double tunnel-coupled quantum wells (QW) with different doping profile caused by impact of short pulses of the strong longitudinal (in the quantum wells plane) electric field has been investigated. It is established that at low temperatures (4 K) after such impact the long-term metastable state with increased electric conductance may be observed in the case of the asymmetric QW couple with the impurity delta shaped-layer in the narrower QW. It is not observed in the structures with other configurations. The observed effect is explained by the model accounting for metastable changes in the electron energy states spectrum in the studied structures caused by the strong electric field pulses.
Key words: semiconductor heterostructures, coupled quantum wells, impurity band.