Физика Низких Температур: Том 48, Выпуск 2 (Февраль 2022), c. 166-175 ( к оглавлению , назад )
Concentration, thermodynamic density of states, and entropy of electrons in semiconductor nanowires
Namangan Engineering Construction Institute, Namangan 160103, Uzbekistan
A. B. Davlatov and Kh. N. Juraev
Physical-Technical Institute, Uzbekistan Academy of Sciences, Tashkent 100084, Uzbekistan
Received July 14, 2021, published online December 24, 2021
Approximate equations for the concentration of charge carriers, the thermodynamic density of states, and the entropy of electrons in semiconductor nanowires are obtained. To find the charge carrier concentration, the equation for the total number of particles was used. Using various approximate expressions for the Fermi–Dirac distribution function, approximate equations for charge carrier concentration, thermodynamic density of states, entropy are obtained, and graphs of their dependences on the chemical potential at different tempera tures are constructed and analyzed. The graphs of the temperature dependence of the chemical potential are presented and analyzed. Using the thermodynamic density of states, the temperature dependences of the energy levels and the thermal coefficients of changes in these levels are obtained.
Key words: nanowires, thermodynamic density of states, entropy, chemical potential.