Doping from CDW to topological superconductivity: The role of defects on phonon scattering in the non-centrosymmetric PbxTaSe2
A.Glamazda
B.Verkin Institute for Low Temperature Physics and Engineering of the National Academy of Sciences of UkraineKharkiv 61103, Ukraine
E-mail: glamazda@ilt.kharkov.ua
A.Sharafeev, R. Bohle, and P. Lemmens
Institute for Condensed Matter Physics, TU Braunschweig, Braunschweig D-38106, Germany Laboratory for Emerging Nanometrology, TU Braunschweig, Braunschweig D-38106, Germany
K.-Y. Choi
Department of Physics, Sungkyunkwan University, Suwon, Korea
F.C. Chou and R. Sankar
Institute of Physics, Academia Sinica, Nankang, Taipei 11529, R.O.C. Taiwan pos Анотація:831
Received August 8, 2021, published online September 24, 2021
Abstract
The vibrational and electronic properties of the Pb-doped dichalcogenide PbxTaSe2 (x = 0, 0.25, 0.33, 0.5, 0.75, and 1) have been investigated using Raman scattering experiments. A marked variation of the main vibrational modes with Pb concentration x is observed. The concentration dependence of the vibrational modes resembles the dependence of the vibrational modes in TaSe2 on the number of crystallographic layers along the c-axis direction. The temperature and polarization dependences of Raman spectra of PbxTaSe2 revealedadditional broad modes in the low-frequency regime, which are discussed in the context of the remnant chargedensity wave, induced disorder, or PbSe phase formed in the interface of Pb and TaSe2 layers.
Key words: Raman spectroscopy, topological materials, transition metal dichalcogenides.
