Influence of the illumination on the mobility of 2D electrons scattered on the correlated distribution of impurity ions
V.M. Mikheev
Институт физики металлов Уральского отделения РАН г. Екатеринбург, 620990, Россия
E-mail: mikheev@imp.uran.ru
pos Анотація:
Received January 17, 2017
Abstract
For example AlxGa1–xAs/GaA heterostructure the influence of the illumination on the mobility of 2D electrons scattered on the correlated distribution of impurity ions have been investigated. It has been showed that the backlight of the sample at sufficiently high temperatures leads to the suppression of the effect of “electronic conductivity inversion”.
PACS: 73.21.Fg Quantum wells;
PACS: 73.90.+f Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures.
Key words: quantum wells, two-dimensional electron mobility, spatial correlations of impurity ions, model of hard spheres.
Published online: February 24, 2017
