Antisymmetric contribution to the magnetoresistance of heterostructure in the in-plane magnetic field
A.S. Bogolubskiy1, S.V. Gudina1, V.N. Neverov1, S.G. Novokshonov1, and M.V. Yakunin1,2
1Федеральное государственное бюджетное учреждение науки Институт физики металлов им. М.Н. Михеева Уральского отделения Российской академии наук, ул. С. Ковалевской, 18, г. Екатеринбург, 620041, ГСП-170, Россия
E-mail: neverov@imp.uran.ru
2Уральский федеральный университет им. первого Президента России Б.Н. Ельцина, ул. Мира, 19, г. Екатеринбург, 620002, Россия
pos Анотація:
Received January 17, 2016
Abstract
Anisotropy of magnetoresistance depending on the current direction in the in-plane magnetic field (perpendicular to the current direction) for two-dimensional system is experimentally observed. The effect is caused by the combined action of the Lorentz force, leading to a shift of the electron density maximum from the center to the various walls of the quantum well with the opposite directions of the current, and the difference of the scatterer contributions to resistance from different sides of the quantum well. It is experimentally shown that the difference between the resistances at opposite current directions is: an odd effect with respect to the magnetic field direction; the effect increases with the current raising; the magnetic field dependences of the resistance difference form a single curve in relation to the product of the magnetic field and the square root of the current value. The sign of the effect allows us to conclude that the scattering from the substrate side is less than from the surface side.
PACS: 73.21.Fg Quantum wells;
PACS: 73.40.–c Electronic transport in interface structures.
Key words: quantum well, low-dimensional electron gas, scattering potential.
Published online: February 24, 2017
