1M.N. Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences 18 S. Kovalevskaya Str., Ekaterinburg 620137, Russia
E-mail: ilchenko@imp.uran.ru
2Physikalisches Institut (EP3), University of Würzburg, Würzburg 97074, Germany 3B.N. Yeltsin Ural Federal University, 19 Mira Str., Ekaterinburg 620002, Russia
4A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences 13 Akad. Lavrent’eva Ave., Novosibirsk 630090, Russia
5Novosibirsk State University, 2 Pirogova Str., Novosibirsk 630090 Russia
6National Research Tomsk State University, 36 Lenina Ave., Tomsk 634050, Russia pos Анотація:
Received December 6, 2016
Abstract
We have measured the temperature (2.9 K < T < 50 K) and magnetic field (0 T < B < 9 T) dependences of longitudinal and Hall resistivities for HgCdTe/HgTe/HgCdTe system with HgTe quantum well width of 20.3 nm. The activation analysis of the experimental magnetoresistivity traces has been used as a quantitative tool to probe inter-Landau level distances. The activation energies were determined from the temperature dependence of the longitudinal resistivity in the regions of quantized Hall plateaus (for the filling factors ν of 1, 2 and 3) and the indications of the large values of the g factor ≅ 30–75 were found.
