The conditions of longitudinal and Hall conductance critical behavior in quantum Hall regime for heterostructures based on gallium and indium arsenide

A.S. Klepikova¹, Yu.G. Arapov¹, S.V. Gudina¹, V.N. Neverov¹, G.I. Harus¹, N.G. Shelushinina¹, M.V. Yakunin^1,2, and B.N. Zvonkov³

¹Institute of Metal Physics RAS, Ekaterinburg 620041, Russia
E-mail: neverov@imp.uran.ru,
klepikova@imp.uran.ru

²Ural Federal University, Mira, 19, Ekaterinburg 620002, Russia

³НИФТИ федерального государственного автономного образовательного учреждения высшего образования «Нижегородский государственный университет им. Н.И. Лобачевского», пр. Гагарина, 23, корп. 3, г. Нижний Новгород, 603950, Россия
pos Анотація:

Received December 6, 2016

The longitudinal and Hall resistivities in the quantum Hall effect (QHE) regime for n-InGaAs/GaAs nanostructures with single and double quantum wells are investigated at B=(0–16) T and T=(0.05–4.2) K, before and after IR-illumination. The features of the critical behavior of the longitudinal and Hall conductance in the plateau-plateau regions are studied to identify the conditions of experimental observation of the scaling mode. Temperature dependences of QHE plateau-to-plateau transition width are analyzed on a base of two-parameter scaling theory.

PACS: 73.21.Fg Quantum wells;
PACS: 73.40.–c Electronic transport in interface structures
PACS: 73.43.–f Quantum Hall effects.

Key words: quantum Hall effect, scaling hypothesis, scale of impurity potential.

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