Low Temperature Physics: 43, 449 (2017); https://doi.org/10.1063/1.4983332
Fizika Nizkikh Temperatur: Volume 43, Number 4 (April 2017), p. 560-565    ( to contents , go back )

Manganese spin relaxation in ferromagnetic (Ga,Mn)As

I.V. Krainov1,2, N.S. Averkiev1, and E. Lähderanta2

1Ioffe Physical-Technical Institute, St. Petersburg 194021, Russia
E-mail: igor.kraynov@mail.ru

2Lappeenranta University of Technology, P.O. Box 20, Lappeenranta FI-53851, Finland
pos Анотація:

Received December 6, 2017


In this paper the theory of spin relaxation 3d5 manganese electrons in (Ga,Mn)As is presented, including the ferromagnetic and paramagnetic phases. The gallium arsenide doped with manganese holes manifest themselves in two ways, as the carriers cause magnetic interaction between the manganese centers, and as a channel for their spin relaxation. The strong spin-orbit interaction of the holes leads to a short time of spin relaxation, and the exchange interaction with 3d5 electrons of manganese causes its fast spin relaxation. This mechanism of spin relaxation is dominated by manganese in the ferromagnetic phase, and in the paramagnetic phase the main mechanism of spin relaxation of Mn is caused by hole spin fluctuations.

PACS: 75.50.Pp Magnetic semiconductors;
PACS: 75.78.–n Magnetization dynamics.

Key words: diluted magnetic semiconductors, spin relaxation, ferromagnetic resonance.

Published online: February 24, 2017

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