Low Temperature Physics: 41, 157 (2015); https://doi.org/10.1063/1.4906539
Физика Низких Температур: Том 41, Выпуск 2 (Февраль 2015), c. 207-209 ( к оглавлению , назад )
Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese
T. Charikova, V. Okulov, A. Gubkin, and A. Lugovikh
Institute of Metal Physics RAS, Ekaterinburg, Russia
K. Moiseev and V. Nevedomsky
Ioffe Institute, St. Petersburg, Russia
Yu. Kudriavtsev and S. Gallardo
Departamento de Ingenieria Electrica–SEES, Cinvestav-IPN, Mexico
Departamento de Fisica, Cinvestav-IPN, Mexico
Received October 20, 2014
The magnetic moment and magnetization in GaAs/Ga0.84In0.16As/GaAs heterostructures with Mn deluted in GaAs cover layers and with atomically controlled Mn δ-layer thicknesses near GaInAs-quantum well (~3 nm) in temperature range T = 1.8–300 K in magnetic field up to 50 kOe have been investigated. The mass mag-netization all of the samples of GaAs/Ga0.84In0.16As/GaAs with Mn increases with the increasing of the magnetic field that pointed out on the presence of low-dimensional ferromagnetism in the manganese depletion layer of GaAs based structures. It has been estimated the manganese content threshold at which the ferromagnetic ordering was found.
PACS: 72.80.Ey III–V and II–VI semiconductors;
Key words: magnetic semiconductors, magnetization, depletion layer of manganese.
Published online: December 22, 2014