Doping from CDW to topological superconductivity: The role of defects on phonon scattering in the non-centrosymmetric PbxTaSe2
B.Verkin Institute for Low Temperature Physics and Engineering of the National Academy of Sciences of UkraineKharkiv 61103, Ukraine
A.Sharafeev, R. Bohle, and P. Lemmens
Institute for Condensed Matter Physics, TU Braunschweig, Braunschweig D-38106, Germany Laboratory for Emerging Nanometrology, TU Braunschweig, Braunschweig D-38106, Germany
Department of Physics, Sungkyunkwan University, Suwon, Korea
F.C. Chou and R. Sankar
Institute of Physics, Academia Sinica, Nankang, Taipei 11529, R.O.C. Taiwan pos Анотація:831
Received August 8, 2021, published online September 24, 2021
The vibrational and electronic properties of the Pb-doped dichalcogenide PbxTaSe2 (x = 0, 0.25, 0.33, 0.5, 0.75, and 1) have been investigated using Raman scattering experiments. A marked variation of the main vibrational modes with Pb concentration x is observed. The concentration dependence of the vibrational modes resembles the dependence of the vibrational modes in TaSe2 on the number of crystallographic layers along the c-axis direction. The temperature and polarization dependences of Raman spectra of PbxTaSe2 revealedadditional broad modes in the low-frequency regime, which are discussed in the context of the remnant chargedensity wave, induced disorder, or PbSe phase formed in the interface of Pb and TaSe2 layers.
Key words: Raman spectroscopy, topological materials, transition metal dichalcogenides.