Физика Низких Температур: Том 47, Выпуск 10 (Октябрь 2021), c. 928-937 ( к оглавлению , назад )
Magnetoresistance of graphite nanoplatelets with different structure
I.V. Ovsiienko, T. A. Len, O. A. Syvolozhskyy, and L. Yu. Matzui
Taras Shevchenko National University of Kyiv, Kyiv 01601, Ukraine
I.G. Mirzoiev, V. V. Andrievskii, and E. Yu. Beliayev
B.Verkin Institute for Low Temperature Physics and Engineering of the National Academy of Sciences of UkraineKharkiv 61103, Ukraine
Received April 21, 2021, revised May 26, 2021, published online August 26, 2021
The magnetoresistance of bulk specimens of graphite nanoplatelets obtained by different methods is studied in magnetic fields up to 2.2 T. It has been established that magnetoresistance is negative for graphite nanoplatelets prepared by chemical treatment of source graphite with a solution of potassium permanganate in sulfuric acid. This negative magnetoresistance can be explained in terms of the model of charge carrier’s weak localization in a system with imperfect structure. It has been established that the magnetoresistance is positive and independent of temperature for graphite nanoplatelets produced by sonication method. Moreover, magnetoresistance is linear relative to a magnetic field in fields above ~ 0.7 T. It is shown that linear magnetoresistance can be explained in the terms of the Abrikosov’s model of quantum linear magnetoresistance.
Key words: graphite nanoplatelets, magnetoresistance, structure imperfection, weak localization, quantum magnetoresistance.