Low Temperature Physics: 35, 48 (2009); https://doi.org/10.1063/1.3064908 (5 pages)
Физика Низких Температур: Том 35, Выпуск 1 (Январь 2009), c. 64-69    ( к оглавлению , назад )

Doped nanoparticles for optoelectronics applications

M. Godlewski1,2, E. Wolska2, and S. Yatsunenko1

1Institute of Physics Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw, Poland
E-mail: godlew@ifpan.edu.pl

2Department of Mathematics and Natural Sciences, College of Sciences, Cardinal S. Wyszyński University, Warsaw, Poland

A. Opalińska, J. Fidelus, and W. Łojkowski

Institute of High Pressure PAN «Unipress», Sokolowska 29/37, Warsaw, Poland

M. Zalewska and A. Kłonkowski

Faculty of Chemistry, University of Gdańsk, Sobieskiego 18, 80-952 Gdańsk, Poland

D. Kuritsyn

Institute for Physics of Microstructures Russian Academy of Science, GSP-105, Nizhny Novgorod, 603950 Russia

Received July 8, 2008


Nanoparticles of wide band gap materials doped with transition metal ions or rare earth ions are intensively studied for their possible applications in a new generation of light sources for an overhead illumination. In this work we discuss mechanisms of emission enhancement in nanoparticles doped with rare earth or/and transition metal ions. Arguments are presented that phosphors of nanosize may emit light more efficiently and thus be applied in practical optoelectronic devices.

PACS: 81.07.Wx Nanopowders;
PACS: 78.47.–p Spectroscopy of solid state dynamics;
PACS: 78.55.–m Photoluminescence, properties and materials;
PACS: 78.55.Hx Other solid inorganic materials.

Key words: excitation processes in nanoparticles, photon cascade processes.