Low Temperature Physics: 29, 270 (2003); https://doi.org/10.1063/1.1542448 (4 pages)
Физика Низких Температур: Том 29, Выпуск 3 (Март 2003), c. 356-360    ( к оглавлению , назад )

Exciton-induced lattice defect formation

E.V. Savchenko and A.N. Ogurtsov

B. Verkin Institute for Low Temperature Physics and Engineering of the National Academy of Science of Ukraine, 47 Lenin Ave., Kharkov 61103, Ukraine
E-mail: savchenko@ilt.kharkov.ua

G. Zimmerer

Institut für Experimentalphysik der Universität Hamburg, Hamburg 22761, Germany

Received December 25, 2002


The lattice defect formation in solid Ne induced by electronic excitation was studied using the selective vacuum ultraviolet spectroscopy method. The samples were excited with synchrotron radiation in the range of excitonic absorption n = 2Г(3/2). The dose dependence of the intensity distribution in the band of atomic type self-trapped exciton luminescence was analyzed. A direct evidence of the formation and accumulation of point lattice defects in solid Ne via the excitonic mechanism was obtained for the first time. The model of the permanent lattice defect formation is discussed.

61.82.Ms - Insulators
71.35.-y - Excitons and related phenomena
78.55.Hx - Other solid inorganic materials