Low Temperature Physics: 29, 215 (2003); https://doi.org/10.1063/1.1542442 (8 pages)
Физика Низких Температур: Том 29, Выпуск 3 (Март 2003), c. 286-295    ( к оглавлению , назад )

Effects of electron irradiation on structure and bonding of SF6 on Ru(0001)

N.S. Faradzhev, D.O. Kusmierek, B.V. Yakshinskiy, and T.E. Madey

Department of Physics and Astronomy and Laboratory for Surface Modification, Rutgers University 136 Frelinghuysen Rd., Piscataway, NJ 08854-8019, USA
E-mail: madey@physics.rutgers.edu

Received July 22, 2002, revised August 14, 2002


Electron stimulated desorption ion angular distribution (ESDIAD) and temperature programmed desorption (TPD) techniques have been employed to study radiation-induced decomposition of fractional monolayer SF6 films physisorbed on Ru(0001) at 25 K. Our focus is on the origin of F+ and F- ions, which dominate ESD from fractional monolayers. F- ions escape only in off-normal directions and originate from undissociated molecules. The origins of F+ ions are more complicated. The F+ ions from electron stimulated desorption of molecularly adsorbed SF6 desorb in off-normal directions, in symmetric ESDIAD patterns. Electron beam exposure leads to formation of SFx (x = 0 - 5) fragments, which become the source of positive ions in normal and off-normal directions. Electron exposure > 1016 cm- 2 results in decomposition of the entire adsorbed SF6 layer.

79.20.La - Photon- and electron-stimulated desorption