Low Temperature Physics: 28, 547 (2002); https://doi.org/10.1063/1.1496665 (4 pages)
Физика Низких Температур: Том 28, Выпуск 7 (Июль 2002), c. 763-767    ( к оглавлению , назад )

Influence of dissipation on a low-voltage dc current in a long SNS junction

Sergey I. Kulinich2

B. Verkin Institute for Low Temperature Physics and Engineering of the National Academy of Sciences of Ukraine, 47 Lenin Ave., Kharkov 61103, Ukraine

Robert I. Shekhter

2Department of Applied Physics, Chalmers University of Technology and Göteborg University, SE-412 96 Göteborg, Sweden
E-mail: shekhter@fy.chalmers.se

Received April 19, 2002


The dc current through a voltage-biased long transparent SNS junction in a dissipative regime is considered. The problem under certain conditions is mapped onto exactly solvable model of energy pumping into a quasiballistic 1D quantum ring driven by time-dependent magnetic flux. A rich peak-like structure of the subgap current at low voltages is predicted. The maxima in the current correspond to resonant energy absorption for fractional values of the normalized bias voltage.

74.80.Fp -
74.50.+r - Tunneling phenomena; point contacts, weak links, Josephson effects (for SQUIDs, see 85.25.Dq; for Josephson devices, see 85.25.Cp; for Josephson junction arrays, see 74.81.Fa)